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 INCHANGE Semiconductor
isc Product Specification 2SB680
isc Silicon PNP Power Transistor
DESCRIPTION *High Power Dissipation: PC= 100W(Max.)@TC=25 *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) *Complement to Type 2SC1080
APPLICATIONS *Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IE
Emitter Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
12
A
PC
100
W
Tj
150
Tstg
Storage Temperature
-65~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification 2SB680
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -100mA ;IB= 0
-100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -10mA ;IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10A; IB= -1A
-3.0
V
VBE(on)
Base-Emitter On Voltage
IC= -10A ; VCE= -5V
-2.5
V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
-0.1
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.1
mA
hFE-1
DC Current Gain
IC= -2A ; VCE= -5V
40
140
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
15
COB
Output Capacitance
VCB= -10V; ftest= 1MHz
900
pF
fT
Current-Gain--Bandwidth Product
IC= -2A ; VCE= -5V
6
MHz
hFE-1 Classifications R 40-80 Y 70-140
isc Websitewww.iscsemi.cn


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